Piezo-electric/electrostrictive device and method of manufacturing

ABSTRACT

The present invention provides a piezo-electric/electrostrictive device including a pair of thin plate sections in an opposed relation to each other, a fixing section for supporting the thin plate sections, and at least one pair of piezo-electric/electrostrictive elements are provided to the pair of thin plate sections. The thin plate sections include movable sections having end surfaces in an opposed relation. Recesses between the thin plate sections are filled with a filler are formed at the boundaries between the thin plate sections, and the fixing section and the movable sections. As a result, the impact resistance of the device is enhanced. The present invention also relates to a method for producing such a device.

CROSS REFERENCE TO RELATED APPLICATIONS

[0001] This application is a division of U.S. application Ser. No.09/663,145 filed Sep. 15, 2000, which in turn is a continuation-in-partof U.S. application Ser. No. 09/501,162 filed Feb. 9, 2000 and U.S.application Ser. No. 09/524,042 filed Mar. 13, 2000, and which claimsthe benefit of U.S. Provisional Application Serial No. 60/218,191 filedJul. 14, 2000, the entireties of which are incorporated herein byreference.

FIELD OF THE INVENTION

[0002] The present invention relates to apiezo-electric/electrostrictive device including movable sections whichoperate based on the displacement movement of apiezo-electric/electrostrictive element, apiezo-electric/electrostrictive device in which the displacement of themovable sections can be detected by a piezo-electric/electrostrictiveelement, and a method for producing the same. Specifically, the presentinvention relates to a piezo-electric/electrostrictive device havinghigh strength, high impact resistance, and high moisture resistance inwhich movable sections can be operated in a large movement efficiently,and a method for producing the same.

BACKGROUND OF THE INVENTION

[0003] Recently, in the field of optics, magnetic recording, andprecision processing, there is a demand for a displacement elementcapable of adjusting the length and position of an optical path byorders of submicron. In an attempt to satisfy such a demand,developments have been pursued for a displacement element which utilizesa displacement generated by an inverse piezo-electric effect and anelectrostrictive effect obtained when a voltage is applied to apiezo-electric/electrostrictive material (for example, ferroelectricsubstances and the like).

[0004] As a conventional displacement element such as described above,Japanese Unexamined Patent Publication No. 10-136665 discloses apiezo-electric actuator having a structure where apiezo-electric/electrostrictive material is formed into a plate-likebody which is then perforated, thereby integrally forming a fixingsection, movable sections, and a beam section for supporting them intoone-piece unit, and an electrode layer is formed in the beam section. Inthis piezo-electric/electrostrictive actuator, when a voltage is appliedto the electrode layer, the beam section shrinks in a direction thatconnects the fixing section to the movable sections due to the inversepiezo-electric effect and electrostrictive effect. As a result, themovable sections can be displaced along an arc or rotatively displacedwithin the surface of the plate-like body.

[0005] Japanese Unexamined Patent Publication No. 63-64640 discloses atechnique using an actuator with a bimorph. The electrode of the bimorphis divided into a plurality of electrodes, and the divided electrodesare selectively driven. In this manner, positioning can be performedwith high accuracy at high speed. This prior art publication shows (inparticular, in FIG. 4) the structure where two bimorphs are positionedin an opposed relation to each other.

[0006] However, the conventional actuators described above are entirelyconstituted by fragile materials which are relatively heavy in weight.Therefore, they have low mechanical strength, and are poor in handlingcharacteristics and impact resistance.

[0007] Conventionally, in an attempt to improve the mechanical strengthof the conventional actuators, the strength of the section easy tovibrate has been enhanced. For this purpose, the enhancement in therigidity of the vibration section has been conducted. The enhancementadversely affects the basic properties of the actuator itself, such asresonance characteristics and displacement, and causes a problem in thatthe adjustment of the basic properties becomes difficult.

SUMMARY OF THE INVENTION

[0008] The present invention has been made in order to improve theimpact resistance of the force sensor described in Japanese PatentApplications Nos. 11-114669, 11-259006, and 11-259007 which are priorapplications filed by the present inventors. Furthermore, the presentinvention has been made based on the finding that, in the force sensordescribed in the U.S. patent application No. 09/501,162 which utilized apiezo-electric body, the impact exerted to the operating body from theoutside is easily adsorbed by a viscoelastic body provided into a narrowslot formed under the supporting bed, thereby improving the impactresistance of the vibration plate.

[0009] In order to enhance the impact resistance of the device, whilegiving only a small influence on the basic properties of the deviceitself, according to the present invention, apiezo-electric/electrostrictive device includes a pair of thin platesections in an opposed relation to each other, a fixing section forsupporting the thin plate sections, the pair of thin plate sectionshaving a movable section at a top end thereof, and at least one of thepair of thin plate sections having one or morepiezo-electric/electrostrictive elements, wherein a filler is providedin recesses between the thin plate sections and the movable sections, orin recesses between the thin plate sections and the fixing section. Withthis arrangement, even if the thin plate sections produce largedisplacements by receiving a large impact from the outside, the stressgenerated at the boundary between the thin plate sections and themovable sections or between the thin plate sections and the fixingsection is dispersed into the filler provided in the recess. In thismanner, there is no damage of the device which has been conventionallyresulted from the concentration of the stress, and the impact resistanceof the thin plate sections is enhanced.

[0010] In the present invention, the concept of thepiezo-electric/electrostrictive device resides in that electrical energyand mechanical energy are alternately converted by apiezo-electric/electrostrictive element included therein. Therefore, thepiezo-electric/electrostrictive device is most preferably used as anactive device, such as various actuators and vibrators, and especially adisplacement device which utilizes a displacement created by a backwardvoltage effect and electrostrictive effect. In addition, thepiezo-electric/electrostrictive device is also preferable as a passivedevice such as acceleration sensor elements and impact sensor elements.

[0011] As a material for the filler, an organic resin, such as anadhesive, glass, a mixture of an organic resin and ceramics, metal, or amixture of metal and ceramics may be used. The filler may be porous ordense. It is preferable that the filler is highly porous as its hardnessincreases, and is highly dense as its flexibility increases. The fillerlayer is preferably adhered to the thin plate section, and the movablesection, the fixing section, and the filler layer itself have elasticityor flexibility. Furthermore, the filler itself is preferably aviscoelastic body, because a filler with viscoelasticity effectivelyadsorbs the impact from the outside.

[0012] The recess into which the filler is provided has a shape ofrectangle. Alternatively, the surface of the recess formed by the innersurface of the movable section or fixing section in an opposed relationto the thin plate section may be in a step-like or tapered shape. Whenthe device is produced by laminating green sheets, the recess may beformed by a single layer or multiple layers. When the recess is formedby a single layer, the preferable thickness of the recess is 0.01 to 0.3mm, and the preferable depth thereof is 0.03 to 1 mm. The preferableratio of thickness to depth (thickness/depth) is 0.01 to 10, and morepreferably 0.1 to 3. When the recess is formed by multiple layers, thethickness of the recess is preferably increased in the longitudinaldirection of the thin plate section.

[0013] The thickness of the recess indicates the length of the shortestportion in the recess. The recess does not necessarily have a uniformsize, but its opening or bottom may have a larger size.

[0014] Preferably, a method for producing apiezo-electric/electrostrictive device including a pair of thin platesections in an opposed relation to each other, a fixing section forsupporting the thin plate sections, the pair of thin plate sectionshaving a movable section at a top end thereof, and at least one of thepair of thin plate sections having one or morepiezo-electric/electrostrictive elements, includes the steps of formingand preparing a first ceramic green sheet to be the thin plate section,a second ceramic green sheet having a first window section, and a thirdceramic green sheet having a window section smaller than the firstwindow section, and interposing at least the second ceramic green sheetbetween the first and third ceramic green sheets to prepare a laminatedbody of a plurality of ceramic green sheets.

[0015] It is also preferable that a method for producing apiezo-electric/electrostrictive device including a pair of thin platesections in an opposed relation to each other, a fixing section forsupporting the thin plate sections, the pair of thin plate sectionshaving a movable section at a top end thereof, and at least one of thepair of thin plate sections having one or morepiezo-electric/electrostrictive elements, includes the steps of formingand preparing a first ceramic green sheet to be the thin plate section,and a second ceramic green sheet having a window section, andinterposing a sheet containing a high-melting point metal between thefirst ceramic green sheet and the second ceramic green sheet.

[0016] In addition, it is preferable that the sheet containing thehigh-melting point metal is formed by a printing method.

BRIEF DESCRIPTION OF THE DRAWINGS

[0017]FIG. 1 is a perspective view showing apiezo-electric/electrostrictive device.

[0018]FIG. 2 is an explanatory diagram showing the movement of apiezo-electric/electrostrictive device.

[0019]FIG. 3 is an explanatory diagram showing another shape of fillerfilled into the recess.

[0020]FIG. 4 is a perspective view showing apiezo-electric/electrostrictive device having a recess of another type.

[0021]FIG. 5 is an explanatory diagram showing a filler having a shapedifferent from the shape shown in FIG. 4.

[0022]FIG. 6 is a perspective diagram showing apiezo-electric/electrostrictive device having a recess of another type.

[0023]FIG. 7 is an explanatory diagram showing a filler having a shapedifferent from the shape shown in FIG. 6.

[0024]FIG. 8 is a perspective view showing apiezo-electric/electrostrictive device having a recess of another type.

[0025]FIG. 9 is an explanatory diagram showing green sheets to belaminated on top of each other.

[0026]FIG. 10 is an explanatory diagram showing the state where thegreen sheets are laminated on top of each other.

[0027]FIG. 11 is an explanatory diagram showing the state after thepiezo-electric layer is formed.

[0028]FIG. 12 is an explanatory diagram showingpiezo-electric/electrostrictive device after cutting.

DETAILED DESCRIPTION OF THE INVENTION

[0029] Hereinafter, embodiments in which thepiezo-electric/electrostrictive device of the present invention isobtained will be described in detail.

[0030]FIG. 1 is a perspective view showing apiezo-electric/electrostrictive device 10. Thepiezo-electric/electrostrictive device 10 has a substrate 16 in which apair of thin plate sections 12 a and 12 b in an opposed relation to eachother, and a fixing section 14 for holding the thin plate sections 12 aand 12 b are integrally formed. A part of the pair of thin platesections 12 a and 12 b is respectively formed withpiezo-electric/electrostrictive elements 18 a and 18 b.

[0031] In the piezo-electric/electrostrictive device 10, the pair ofthin plate sections 12 a and 12 b are displaced by driving thepiezo-electric/electrostrictive elements 18 a and/or 18 b, or thedisplacement of the pair of thin plate sections 12 a and 12 b isdetected by the piezo-electric/electrostrictive elements 18 a and/or 18b.

[0032] The top end of the respective thin plate sections 12 a and 12 bprojects inwardly to be thick. The thick portions serve as movablesections 20 a and 20 b which are displaced in accordance with thedisplacement movement of the thin plate sections 12 a and 12 b.Hereinafter, the top ends of the thin plate sections 12 a and 12 b arereferred to as movable sections 20 a and 20 b.

[0033] At the boundaries between the top ends of the thin plates 12 aand 12 b, and the movable sections 20 a and 20 b, respectively, recesses20 c and 20 d are formed along a longitudinal direction of the thinplate sections 12 a and 12 b. In the respective recesses 20 c and 20 d,a filler is provided. Similarly, at the boundaries between the bottomends of the thin plates 12 a and 12 b and the fixing section 14,recesses 14 a and 14 b are formed along a longitudinal direction of thethin plate sections 12 a and 12 b, respectively. In the recesses 14 aand 14 b, a filler is provided.

[0034] The substrate 16 may have a single structure made of ceramicsalone, or alternatively, may have a hybrid structure made of ceramicsand a metallic material in combination.

[0035] The substrate 16 also may have a structure in which the membersthereof are attached to each other by an adhesive such as an organicresin and glass, a ceramic-integrated structure in which ceramic greensheets are laminated on top of each other and are sintered intoone-piece unit, or a metal-integrated structure in which metallicmembers are integrated into one-piece unit by brazing, soldering,eutecting bonding, or welding. Preferably, the substrate 16 is formedwith a ceramic laminated body produced by sintering ceramic greenlaminated body into a one-piece unit.

[0036] When the substrate has a ceramic-integrated structure, noadhesive is used at the connections between its members. Without the useof adhesive, the substrate undergoes almost no change of state with theelapse of time, and therefore, this structure is advantageous in thathigh reliability is attained at the connections between the members, andhigh rigidity is also attained. In addition, this structure can beeasily produced by a ceramic green sheet laminating method which will bedescribed later.

[0037] The piezo-electric/electrostrictive elements 18 a and 18 b areprepared independently from the substrate 16, as will be describedlater, and then are attached to the substrate 16 with an adhesive suchas an organic resin and glass, or by a method such as brazing,soldering, eutectic bonding and the like. Alternatively, thepiezo-electric/electrostrictive elements 18 a and 18 b are directly andintegrally formed into the substrate 16 by a film forming method,instead of being attached to the substrate 16.

[0038] The piezo-electric/electrostrictive elements 18 a and 18 brespectively include a piezo-electric/electrostrictive layer 22, and apair of electrodes 24 and 26 formed on both sides of thepiezo-electric/electrostrictive layer 22. Among the pair of electrodes24 and 26, at least the electrodes 24 are formed on the pair of thinplate sections 12 a and 12 b.

[0039] In one embodiment of the present invention, a description ismainly made to the case where the piezo-electric/electrostrictiveelements 18 a and 18 b have the following structure. That is, thepiezo-electric/electrostrictive layer 22, and the pair of electrodes 24and 26 respectively have a multilayered structure. The electrodes 24 andthe electrodes 26 are alternately laminated to each other in such amanner that the cross-section of the laminated electrodes 24 and 26 issubstantially in the form of comb. The portion where the electrodes 24and the electrodes 26 overlap each other in a state of interposing thepiezo-electric/electrostrictive layer 22 therebetween has a multistagestructure. However, the structure of the piezo-electric/electrostrictivelayer 22 and the pair of electrodes 24 and 26 is not limited to themultilayered structure, but may be a single-layered structure. Thenumber of the layers is not specifically limited, however, ten layers orsmaller is preferable, and five layers or smaller is more preferable. Inaddition, only one of the piezo-electric/electrostrictive layers 18 a or18 b may be formed. The number of the layers of thepiezo-electric/electrostrictive layer 22, and the electrodes 24 and 26may be different from each other.

[0040]FIG. 1 shows the case where the piezo-electric/electrostrictivelayer 22 has a three-layered structure. The electrodes 24 is formed intoa shape of comb so as to be positioned under the lower surface of thefirst layer of the piezo-electric/electrostrictive layer 22 (i.e., onthe side surface of the thin plate sections 12 a and 12 b) and on theupper surface of the second layer thereof. The other electrodes 26 areformed into the shape of a comb so as to be positioned on the uppersurface of the first layer of the piezo-electric/electrostrictive layer22, and on the upper surface of the third layer thereof. In thisstructure, since the electrodes 24 and the other electrodes 26 arerespectively connected to each other into common electrodes, the numberof the terminals 28 and 30 can be decreased. In this manner, upsizing ofthe piezo-electric/electrostatic elements 18 a and 18 b can besuppressed even though they are formed in a multilayered structure.

[0041] The application of voltage to the pair of electrodes 24 and 26 isconducted through the terminals (i.e. pads) 28 and 30 which are formedon the electrodes 24 and 26 located at the position above the sidesurfaces of the fixing section 14 (i.e. surfaces on which thepiezo-electric/electrostrictive elements are formed). The terminals 28and 30 are formed so that the terminal 28 corresponding to theelectrodes 24 is located at a position close to the bottom end of thefixing section 14, and the terminal 30 at the outer space sidecorresponding to the electrodes 26 is located at the position close tothe inner wall of the fixing section 14.

[0042] In this case, the fixation of the piezo-electric/electrostrictivedevice 10 can be conducted using its surfaces other than the surfaces onwhich the terminals 28 and 30 are formed. As a result, high reliabilitycan be attained for both the fixation of thepiezo-electric/electrostrictive device 10, and the electric connectionbetween the circuits and the terminals 28 and 30. In this structure, theterminals 28 and 30 are electrically connected to the circuits by aflexible printing circuit (also referred to as FPC), flexible flat cable(also referred to as FFC), wire bonding and the like.

[0043] By use of the piezo-electric/electrostrictive elements 18 a and18 b having a multilayered structure, the driving force of the actuators19 a and 19 b is increased, and large displacement is attainedaccordingly. In addition, the rigidity of thepiezo-electric/electrostrictive device 10 itself is also increased, andhigh resonance frequency is attained accordingly thereby easilyspeeding-up the displacement movement.

[0044] As the actuators 19 a and 19 b have an increased number ofstages, their driving force increases; however, consumption of theelectric power also increases accordingly. Therefore, when the presentinvention is carried out, the number of stages of the actuators 19 a and19 b and the like may be determined in accordance with the applicationand use conditions of the piezo-electric/electrostrictive device. In thepiezo-electric/electrostrictive device 10 according to this embodiment,by use of the piezo-electric/electrostrictive elements 18 a and 18 b,the width (i.e. the distance in the direction of Y axis) of the thinplate sections 12 a and 12 b basically remains unchanged even if thedriving force of the actuators 19 a and 19 b are increased. Athus-structured piezo-electric/electrostrictive device 10 is morepreferable for use in an actuator for positioning a magnetic head for ahard disk and ringing control, which is used in a space with anextremely small width.

[0045] Next, the movement of the piezo-electric/electrostrictive device10 will be described referring to FIG. 2.

[0046] When the two piezo-electric/electrostrictive elements 18 a and 18b are in a natural state, that is, the piezo-electric/electrostrictiveelements 18 a and 18 b do not perform a displacement movement, thelongitudinal axis m of the piezo-electric/electrostrictive device 10substantially coincides with the central axis of the fixing section 14.

[0047] In this state, a sine wave Wa having a specified bias electricpotential Vb is applied to the pair of electrodes 24 and 26 of thepiezo-electric/electrostrictive elements 18 a. On the other hand, a sinewave Wb having a phase different from the sine wave Wa by substantially180° is applied to the pair of electrodes 24 and 26 of the otherpiezo-electric/electrostrictive element 18 b.

[0048] At a stage where, for example, a voltage of a maximum value isapplied to the pair of electrodes 24 and 26 of thepiezo-electric/electrostrictive element 18 a, thepiezo-electric/electrostrictive layer 22 of thepiezo-electric/electrostrictive layer 22 displaces to shrink in adirection toward its major surface. As shown in FIG. 2, a stress isapplied to the thin plate section 12 a in such a direction as to causethe thin plate section 12 a to become warped toward, for example, aright direction as shown by an arrow A, and as a result, the thin platesection 12 a is warped toward a right direction. At this time, since novoltage is applied to the pair of electrodes 24 and 26 of the otherpiezo-electric/electrostrictive element 18 b, the thin plate section 12b follows the warpage of the thin plate section 12 a and is also warpedtoward a right direction. As a result, the movable sections 20 a and 20b, and the spacer 37 displace toward, for example, a right directionwith respect to the longitudinal axis m of thepiezo-electric/electrostrictive device 10 b. The amount of displacementvaries in accordance with the maximum value of the voltage applied tothe piezo-electric/electrostrictive elements 18 a and 18 b. For example,as the maximum value of the voltage increases, the amount ofdisplacement becomes larger.

[0049] In the case where a piezo-electric/electrostrictive materialhaving high coercive electric field is employed as a material of thepiezo-electric/electrostrictive layer 22, the bias electric potentialmay be adjusted so that the minimum values of the sine waves Wa and Wbare at slightly negative levels. In this case, either one of thepiezo-electric/electrostrictive elements to which the sine wave Wa or Wbat a slightly negative level is applied (for example, thepiezo-electric/electrostrictive element 18 b) is driven, and a stress inthe same direction as the direction of warpage of the thin plate section12 a is applied to the thin plate section 12 b. As a result, it becomespossible to further increase the amount of displacement of the movablesections 20 a and 20 b, and the spacer 37. That is, the employment ofthe waveform described above makes it possible that thepiezo-electric/electrostrictive elements 18 b or 18 a to which the sinewave at a negative level is applied supports the function of thepiezo-electric/electrostrictive elements 18 a or 18 b which plays a mainrole of the displacement movement.

[0050] As described above, in the piezo-electric/electrostrictive device10 according to one embodiment of the present invention, a smalldisplacement of the piezo-electric/electrostrictive elements 18 a and 18b is amplified into a large displacement movement by using the warpageof the thin plate sections 12 a and 12 b, and then is transmitted to themovable sections 20 a and 20 b. In this manner, the movable sections 20a and 20 b can be largely displaced with respect to the longitudinalaxis m of the piezo-electric/electrostrictive device 10 b.

[0051] Particularly, in this embodiment, the movable sections 20 a and20 b are formed with attachment surfaces 34 a and 34 b in an opposedrelation to each other. The distance Lc between the attachment surfaces34 a and 34 b is set at a value of about 1.5 times longer than thelength Df of the movable sections 20 a and 20 b. In addition, a largespacer 37 is attached between the attachment surfaces 34 a and 34 b viaan adhesive 38. In this case, the attachment surfaces 34 a and 34 b inan opposed relation to each other are spaced from each other, or aspacer 37 having a weight smaller than the constituent elements of themovable sections 20 a and 20 b is interposed between the attachmentsurfaces 34 a and 34 b in an opposed relation to each other. In thismanner, weight reduction of the movable sections 20 a and 20 b can beeffectively achieved, and the resonance frequency can be increasedwithout lowering the displacement amount of the movable sections 20 aand 20 b.

[0052] In this embodiment, the term “frequency” means a frequency of thewaveform of voltage obtained when the voltage applied to the pair ofelectrodes 24 and 26 is alternately switched, and the movable sections20 a and 20 b are displaced in left and right directions. The term“resonance frequency” means a maximum frequency at which the movablesections 20 a and 20 b can manage to displace in a specified vibrationmode.

[0053] In the piezo-electric/electrostrictive device 10 according to theembodiment of the present invention, the movable sections 20 a and 20 b,the thin plate sections 12 a and 12 b, and the fixing section 14 areintegrally formed into one-piece unit. All of them are not required tobe made of a piezo-electric/electrostrictive material, which is amaterial relatively heavy in weight. The piezo-electric/electrostrictivedevice with this structure 10 has high mechanical strength, excellenthandling characteristics, high impact resistance and moistureresistance, and is resistant to harmful vibrations (for example,residual vibrations in high-speed operation or vibrations generated by anoise).

[0054] Furthermore, in this embodiment of the present invention, in thecase where the attachment surfaces 34 a and 34 b in an opposed relationto each other are spaced, the movable section 20 a including theattachment surface 34 a and the movable section 20 b including theattachment surface 34 b can be easily warped, and become resistant todeformation. This structure gives excellent handling characteristics tothe piezo-electric/electrostrictive device 10.

[0055] Due to the presence of the attachment surfaces 34 a and 34 b inan opposed relation, the movable sections 20 a and 20 b respectivelyhave a large surface area. When another member is attached to themovable sections 20 a and 20 b, large area can be used for attaching themember, thereby firmly attaching the member. When taking intoconsideration the case where a member is attached with an adhesive forexample, the member is attached through not only the major surfaces ofthe movable sections 20 a and 20 b but also the attachment surface 34 aand 34 b in an opposed relation. In this manner, the member can befirmly attached.

[0056] In this embodiment of the present invention, thepiezo-electric/electrostrictive elements 18 a and 18 b are formed withthe piezo-electric/electrostrictive layer 22, and the pair of electrodes24 and 26 which interposes the piezo-electric/electrostrictive layer 22therebetween. Among the pair of electrodes 24 and 26, the electrode 24is directly formed at least on the side surface of the thin platesections 12 a and 12 b. In this manner, the vibration generated by thepiezo-electric/electrostrictive elements 18 a and 18 b can beefficiently transmitted to the movable sections 20 a and 20 b throughthe thin plate sections 12 a and 12 b. As a result, responseness isenhanced.

[0057] In this embodiment of the present invention, as shown in FIG. 1for example, the portion in which the pair of electrodes 24 and 26overlap each other in the state of interposing thepiezo-electric/electrostrictive layer 22 therebetween (i.e., asubstantial driving portion 40) is continuously formed starting from apart of the fixing section 14 to a part of the thin plate sections 12 aand 12 b. If the substantial driving portion 40 is so constructed as toextend to reach a part of the movable sections 20 a and 20 b, there maybe the possibility that the displacement movement of the movablesections 20 a and 20 b counteracts the deformation of the substantialdriving portion 40 and the deformation of the thin plate sections 12 aand 12 b, and large displacement cannot be attained. Contrarily, in thisembodiment, the substantial driving portion 40 is so constructed as notto extend to reach the movable sections 20 a and 20 b, but to cover onlythe fixing section 14. This structure avoids the disadvantage that thedisplacement movement of the movable sections 20 a and 20 b is limited,thereby increasing the displacement amount of the movable sections 20 aand 20 b.

[0058] On the contrary, when the piezo-electric/electrostrictiveelements 18 a and 18 b are formed on a part of the movable sections 20 aand 20 b, it is preferable that the substantial driving portion 40 ispositioned in an area extending from a part of the movable sections 20 aand 20 b to a part of the thin plate sections 12 a and 12 b. This isbecause if the substantial driving portion 40 is so constructed as toextend to reach a part of the fixing section 14, the displacementmovement of the movable sections 20 a and 20 b is restricted, asdescribed above.

[0059] In the above-described embodiment, the movable sections 20 a and20 b have attachment surfaces 34 a and 34 b respectively, and the spacer37 is attachedly mounted therebetween. Alternatively, it is possible toform end surfaces 34 a and 34 b in the fixing section 14. In this case,for example, the movable sections 20 a and 20 b are integrally combinedinto one-piece unit at the top end of the pair of thin plate sections 12a and 12 b, while the end surfaces 34 a and 34 b in an opposed relationto each other are formed in the fixing section 14.

[0060] In this arrangement, the piezo-electric/electrostrictive device10 c can be firmly fixed to a specified fixing position, and increasedreliability can be obtained, on top of the advantages obtained in thecase where the movable sections 20 a and 20 b respectively have theattachment surfaces 34 a and 34 b in an opposed relation to each other.The length of the substantial driving portion 40 is preferably 20 to 95percent, and more preferably 40 to 80 percent with respect to the lengthof the thin plate section 12 a and 12 b.

[0061] When the recess has a rectangular shape, the filler to beprovided therein may have shapes as shown in FIG. 3. In the embodimentshown in FIG. 1, the filler can be filled up to the opening of therecess having a rectangular shape. In the embodiment shown in FIG. 3(a),the filler is filled about halfway the recess, and the area near theopening is free from the filler. In this case, the filler in a specifiedamount is filled into the recess. The arrangement shown in FIG. 3(a) hasan advantage that the end surface of the fillers can be made into thesame shape each other. If the recess has a hollow,portion in which nofiller is provided is formed at its bottom, the effect of dispersing thestress is not adversely affected.

[0062] In the embodiment shown in FIG. 3(b), the filler is provided inthe recess beyond the opening thereof. This arrangement is advantageousin the case where the filler has weak adhesion, because the filler canbe attached inside the recess in a large area, thereby increasing theadhesion of the entire filler. By forming the outer surface of thefiller into an R-shape, the filler can be more firmly fixed into therecess, and never peels off at its end portion.

[0063] Alternatively, the filler formed into the shape as shown in FIG.3(c) may be provided in the recess. In this case, the shape of the areabetween the thin plate section and the fixing section or the movablesection assumes a step-like shape, that is, the area is occupied by thecomer of the filler. This shape of filler is effective, together withthe physical properties of the filler, in further reducing theconcentration of stress onto the base portion of the thin platesections.

[0064] Next, a preferable example of the structure of thepiezo-electric/electrostrictive device 10 according to an embodiment ofthe present invention will be described.

[0065] In order to assure the displacement movement of the movablesections 20 a and 20 b, the distance Dg of the substantial drivingportion 40 of the piezo-electric/electrostrictive elements 18 a and 18 bwhich overlaps the movable sections 20 a and 20 b is preferably made tobe ½ or larger the thickness Dd of the thin plate sections 12 a and 12b.

[0066] Defining the distance between the inner walls of the thin platesections 12 a and 12 b as Da (i.e., the distance in the direction of Xaxis), and the width of the thin plate sections 12 a and 12 b as Db(i.e. the distance in the direction of Y axis), the ratio of Da to Db(Da/Db) is within a range of 0.5 to 20, preferably 1 to 15, and morepreferably 1 to 10. The ratio Da/Db is a value determined based on thefinding that, at this value, a large amount of displacement of themovable sections 20 a and 20 b can be obtained, and the displacementwithin X-Z plane can be predominantly obtained.

[0067] Defining the length between the thin plate sections 12 a and 12 b(i.e., the distance in the direction of Z axis) as De, and the distancebetween the inner walls of the thin plate sections 12 a and 12 b as Da,the ratio of De to Da (De/Da) is preferably made to 0.5 to 10, and morepreferably 0.5 to 5. The ratio De/Da is a value determined based on thefinding that, at this value, a large amount of displacement of themovable sections 20 a and 20 b interposing the spacer 37 therebetweencan be obtained, and the displacement movement can be conducted at highresonance frequency (i.e., high response speed can be attained).

[0068] According to the present invention, in order that thepiezo-electric/electrostrictive device 10 has a structure in which theagitated displacement or vibration in the direction of the Y-axis issuppressed, and a high responsiveness is achieved as well as a largedisplacement at relatively low voltages, the ratio of Da/Db ispreferably made to 0.5 to 20, and the ratio of De/Da is preferably 0.5to 10. More preferably, the ratio of Da/Db is 1 to 10, and the ratio ofDe/Da is 0.5 to 5.

[0069] Furthermore, in the piezo-electric/electrostrictive device 10, ahole section 42 is formed by the inner walls of the pair of thin plates12 and 12 b, the inner walls of the movable section 20 a and 20 b, andthe inner wall of the spacer 37 (and the inner wall of the adhesive 38),and the inner wall of the fixing section 14. The hole section 42 ispreferably filled with a gel material such as silicon gel. In aconventional case, the displacement movement of the movable sections 20a and 20 b is usually restricted by the presence of the filler.Contrarily, in the embodiment of the present invention, the weight ofthe movable sections 20 a and 20 b is reduced by forming the endsurfaces 34 a and 34 b on the movable sections 20 a and 20 b, and anincrease in the amount of the displacement of the movable sections 20 aand 20 b is aimed. As a result, there is no restriction by the filler onthe displacement movement of the movable sections 20 a and 20 b, and ahigh resonance frequency and high rigidity are advantageously attainedas an effect of the presence of the filler.

[0070] The length Df of the movable sections 20 a and 20 b (i.e., thedistance in the direction of Z axis) as Df is preferably short. By usingthe movable sections 20 a and 20 b short in length, the weight of thedevice can be reduced, and the resonance frequency can be increased. Inaddition, the displacement can be enhanced when an article is held.However, in order to give high rigidity in the direction of X axis tothe thin plate sections 12 a and 12 b, and to ensure their properdisplacement, the ratio of the length Df of the movable sections 20 aand 20 b with respect to their thickness Dd is made to be 2 or larger,and preferably 5 or larger.

[0071] The actual size of each member is decided taking intoconsideration the attachment area between the movable sections 20 a and20 b and another member attached thereto, the attachment area betweenthe fixing section 14 and another member attached thereto, theattachment area between the terminals for electrodes and the device, thestrength, durability, and required amount of displacement, resonancefrequency of the entire piezo-electric/electrostrictive device 10, thedriving voltage, and the like.

[0072] Specifically, the distance Da between the inner walls of the thinplate sections 12 a and 12 b is preferably 100 to 2000 μm, and morepreferably 200 to 1600 μm. The width Db of the thin plate sections 12 aand 12 b is preferably 50 to 2000 μm, and more preferably 100 to 500 μm.The thickness Dd of the thin plate sections 12 a and 12 b is made to besmaller than the width Db of the thin plate sections 12 a and 12 b, thatis, to satisfy the relationship of Db>Dd in order that the agitateddisplacement, which is a displacement component in the direction of Yaxis, can be effectively suppressed, and is preferably made to 2 to 100μm, and more preferably 10 to 80μm.

[0073] The length De of the thin plate sections 12 a and 12 b ispreferably made to 200 to 3000 μm, and more preferably 300 to 2000 μm.The length Df of the movable sections 20 a and 20 b is preferably madeto 50 to 2000 μm, and more preferably 100 to 1000 μm, and much morepreferably 200 to 600 μm.

[0074] By employing the structure described above, the displacement inthe direction of Y-axis never exceeds 10 percent with respect to thedisplacement in the direction of X-axis, while the drive at a lowvoltage is possible and the displacement component in the direction ofY-axis can be suppressed to 5 percent or lower by properly adjusting thesize of each member so that the actual sizes satisfies the size ratiosdescribed above. Specifically, the movable sections 20 a and 20 b aredisplaced in the direction of substantially one axis, that is, X-axis.In addition, high responsiveness is attained, and large displacement canbe obtained at relatively low voltages.

[0075] In the piezo-electric/electrostrictive device 10, the movablesections 20 a and 20 b, and the fixing section 14 assume a rectangularshape, unlike the plate-like shape as of a conventional device (wherethe thickness in the direction perpendicular to the displacementdirection is small). In addition, the thin plate sections 12 a and 12 bare provided in such a manner that the movable sections 20 a and 20 bare successive with the side surface of the fixing section 14. As aresult, the rigidity of the piezo-electric/electrostrictive device 10 inthe direction of Y axis can be selectively increased.

[0076] Specifically, in the piezo-electric/electrostrictive device 10having a size constitution as described above, the movable sections 20 aand 20 b alone can be selectively moved within a plane (i.e., within aXZ plane), while suppressing the movement of the movable sections 20 aand 20 b in a YZ plane (that is, the movement in the agitateddirection).

[0077] Next, each constituent element of thepiezo-electric/electrostrictive device 10 according to an embodiment ofthe present invention will be described.

[0078] As described above, the movable sections 20 a and 20 b move basedon the driving amount of the thin plate sections 12 a and 12 b, and havevarious members in accordance of the intended use of thepiezo-electric/electrostrictive device 10. For example, when thepiezo-electric/electrostrictive device 10 is used as a displacementelement, a screening plate for shutting out light is mounted.Particularly, when the piezo-electric/electrostrictive device 10 is usedfor positioning a magnetic head of hard disk drive or a ringingsuppressing mechanism, a member is required for positioning, such as amagnetic head, a slider having a magnetic head, a suspension having aslider and the like is mounted thereon.

[0079] As described above, the fixing section 14 supports the thin platesections 12 a and 12 b, and the movable sections 20 a and 20 b. When thepiezo-electric/electrostrictive device 10 is used for positioning themagnetic head of the hard disk drive, the entirepiezo-electric/electrostrictive device 10 is firmly fixed by supportedlyfixing the fixing section 14 to a carriage arm attached to a voice coilmotor (VCM), a fixing plate or a suspension attached to the carriagearm. In some cases, to the fixing section 14, terminals 28 and 30 orother members for driving the piezo-electric/electrostrictive elements18 a and 18 b may be provided.

[0080] As a material for constituting the movable sections 20 a and 20b, and the fixing section 14, any material may be employed as far as ithas sufficient rigidity. Ceramics, which enable the employment of aceramic green sheet laminating method, are preferred. Examples of thematerial include materials containing zirconia, such as stabilizedzirconia and partially stabilized zirconia, alumina, magnesia, siliconnitride, aluminum nitride, titanium oxide, or a mixture thereof as amain component. Among them, a material containing zirconia, andespecially a material containing stabilized zirconia and a materialcontaining a partially stabilized zirconia a main component arepreferable, because they exhibit high mechanical strength and hightoughness.

[0081] As described above, the thin plate sections 12 a and 12 b aredriven by the displacement of the piezo-electric/electrostrictiveelements 18 a and 18 b. The thin plate sections 12 a and 12 b aremembers in the form of a flexible thin plate. The thin plate sections 12a and 12 b amplify the shrinking displacement of thepiezo-electric/electrostrictive elements 18 a and 18 b provided on thesurface thereof into a flexion displacement, and transmit the flexiondisplacement into the movable sections 20 a and 20 b. The shape andmaterial of the thin plate sections 12 a and 12 b are not specificallylimited as long as they have sufficient flexibility and mechanicalstrength to the extent that they are not damaged by the flexiondeformity, and are properly determined taking into consideration theresponsiveness and operability of the movable sections 20 a and 20 b.

[0082] The thickness Dd of the thin plate sections 12 a and 12 b ispreferably 2 to 100 μm, and the thickness of the thin plate sections 12a and 12 b, and the piezo-electric/electrostrictive elements 18 a and 18b in combination, is preferably 7 to 500 μm. The thickness of theelectrodes 24 and 26 is preferably 0.1 to 50 μm, and the thickness ofthe piezo-electric/electrostrictive layer 22 is preferably 3 to 300 μm.

[0083] As a material for constituting the thin plate sections 12 a and12 b, the same kinds of ceramics as those used for the movable sections20 a and 20 b and the fixing section 14 are preferably used. Among them,the most preferable is a material containing stabilized zirconia as amain component and a material containing a partially stabilizedzirconia, because they exhibit high mechanical strength and hightoughness even if they are made into a thin plate, and have a smallreactiveness with the materials of the piezo-electric/electrostrictivelayer and electrodes.

[0084] The zirconia is preferably stabilized or partially stabilized inthe following manner. That is, compounds for stabilizing or partiallystabilizing the zirconia include yttrium oxide, ytterbium oxide, ceriumoxide, calcium oxide, and magnesium oxide. At least one is added to thezirconia, or two or more of them in combination is added to thezirconia, thereby obtaining the aimed stabilized or partially stabilizedzirconia.

[0085] The addition amount of the respective compound is, in the case ofyttrium oxide and ytterbium oxide, 1 to 30 mole percent, and preferably1.5 to 10 mole percent. In the case of cerium oxide, 6 to 50 molepercent, and preferably 8 to 20 mole percent. In the case of calciumoxide and magnesium oxide, 5 to 40 mole percent, and preferably 5 to 20mole percent. Among them, it is preferable to use yttrium oxide as astabilizer. In this case, the addition amount of the yttrium oxide is1.5 to 10 mole percent, and more preferably 2 to 4 mole percent. It isalso possible to add additives, such as a sintering assistant, such asalumina, silica, and transition metal oxides in an amount ranging from0.05 to 20 weight percent. When the piezo-electric/electrostrictiveelements 18 a and 18 b are formed by a film formation method where greensheets are sintered to be integrated into one-piece unit, it is alsopreferable to add additives such as alumina, magnesia, and transitionmetal oxides.

[0086] In order to obtain high mechanical strength and a stabilizedcrystal phase, the average particle diameter of the zirconia crystals ispreferably 0.05 to 3 μm, and more preferably 0.05 to 1 μm. In addition,as described above, the thin plate sections 12 a and 12 b may beconstituted by the same type of ceramics as that used for the movablesections 20 a and 20 b and the fixing section 14. Preferably, it isadvantageous to use the same material for all the thin plate sections 12a and 12 b, the movable sections 20 a and 20 b, and the fixing section14, in order to attain high reliability at the connection areastherebetween, to give high strength to thepiezo-electric/electrostrictive device 10, and to prevent complicatedproduction of the device.

[0087] The piezo-electric/electrostrictive elements 18 a and 18 b atleast have the piezo-electric/electrostrictive layer 22, and the pair ofelectrodes 24 and 26 for applying an electric field to thepiezo-electric/electrostrictive layer 22. As thepiezo-electric/electrostrictive elements 18 a and 18 b, apiezo-electric/electrostrictive element of a unimorph-type, abimorph-type or the like may be used. Among them, the unimorph-typeelement is more suitable for use in the piezo-electric/electrostrictivedevice 10, because in combination with the thin plate sections 12 a and12 b, the unimorph-type element has a higher ability to stabilize theamount of displacement generated and is advantageous in reducing theweight of the device.

[0088] It is preferable that, as shown in FIG. 1, thepiezo-electric/electrostrictive elements 18 a and 18 b are formed at theside surface of the thin plate sections 12 a and 12 b. This structure ispreferable in that the thin plate sections 12 a and 12 b can producelarger displacement movement.

[0089] As a material for the piezo-electric/electrostrictive layer 22,piezo-electric ceramics are preferably used. Alternatively, it is alsopossible to use electrostrictive ceramics, ferroelectric ceramics, orantiferroelectric ceramics. When the piezo-electric/electrostrictivedevice 10 is used for positioning a magnetic head of hard disk drive andthe like, it is important to keep the linearity between the displacementamount of the movable sections 20 a and 20 b and the driving voltage oroutput voltage. For this reason, it is preferable to use a materialhaving a small strain history, as well as having a coercive electricfield of 10 kV/mm or smaller.

[0090] Specific examples of the piezo-electric/electrostrictive layer 22are ceramics containing lead zirconate, lead titanate, magnesium leadniobate, nickel lead niobate, zinc lead niobate, manganese lead niobate,antimony lead stannate, manganese lead tungstate, cobalt lead niobate,barium titanate, sodium tinanate bismuth, potassium-sodium niobate,srontium tantalate bismuth, and the like alone or in combinationthereof.

[0091] Among them, ceramics containing lead zirconate, lead titanate,and magnesium lead niobate as a main component, and ceramics containingsodium titanate bismuth as a main component are preferred. This isbecause these ceramics have high electromechanical coupling factor andpiezoelectric constant, and exhibit small reactivity with the thin-platesections (ceramics) 12 a and 12 b when calcined to formpiezo-electric/electrostrictive layer 22. In addition, the resultantpiezo-electric/electrostrictive layer 22 has stable composition.

[0092] It is also possible to use ceramics containing, on top of theabove-described components, oxides of lanthanum, calcium, strontium,molybudenum, tungsten, barium, niobium, zinc, nickel, manganese, cerium,cadmium, chromium, cobalt, antimony, iron, yttrium, tantalum, lithium,bismuth, tin and the like alone or in combination thereof.

[0093] For example, by adding lanthanum and strontium to lead zirconate,lead titanate, and lead niobate which are main components of thezirconia, there are advantages in some cases that the coercive electricfield and piezo-electric characteristics become controllable.

[0094] It is preferable to avoid the use of material subject tovitrification, such as silica. This is because a material such as silicaeasily reacts with the material of piezo-electric/electrostrictive layer22 during the heat treatment thereof. As a result of the reaction withthe silica, the composition of the piezo-electric/electrostrictive layer22 fluctuates and the piezo-electric characteristics thereof areimpaired.

[0095] The pair of electrodes 24 and 26 formed in thepiezo-electric/electrostrictive elements 18 a and 18 b are preferablyconstituted by a metal which is in a solid state at a room temperatureand has high conductivity. Examples of such metals include aluminum,titanium, chromium, iron, cobalt, nickel, copper, zinc, niobium,molybdenum, ruthenium, palladium, rhodium, silver, tin, tantalum,tungsten, iridium, platinum, gold, lead, and alloys thereof.Alternatively, it is also possible to use a cermet material in which thesame material or a different material from the material used for thepiezo-electric/electrostrictive layer 22 or the material used for thethin plate sections 12 a and 12 b is dispersed.

[0096] The material of the electrodes 24 and 26 formed in thepiezo-electric/electrostrictive elements 18 a and 18 b is decideddepending on the method for forming the piezo-electric/electrostrictivelayer 22. For example, when the electrode 24 is formed on the thin platesections 12 a and 12 b, and after that thepiezo-electric/electrostrictive layer 22 is formed on the electrode 24by sintering, a high-melting point metal such as platinum, palladium,platinum-palladium alloy, silver-palladium alloy the like is required.On the other hand, when the electrode 26 is formed on thepiezo-electric/electrostrictive layer 22 as the outermost layer afterthe piezo-electric/electrostrictive layer 22, it may be formed at lowtemperature, and therefore, may be mainly made of a low-melting pointmetal such as aluminum, gold, silver and the like as a main component.

[0097] The thickness of the electrodes 24 and 26 may be a considerablylarge factor that deteriorates the displacement of thepiezo-electric/electrostrictive elements 18 a and 18 b. Therefore, as amaterial of the electrode formed after the formation of thepiezo-electric/electrostrictive layer 22 by sintering, it is preferableto use an organometallic paste which forms a fine and thin film aftersintering, such as gold resinated paste, platinum resinated paste, andsilver reginated paste.

[0098] The above embodiment shows the case where the movable sections 20a and 20 b integrally formed with the thin plate sections 12 a and 12 bat their top ends have a thickness larger than the thickness Dd of thethin plate sections 12 a and 12 b. Alternatively, the movable sections20 a and 20 b may have a thickness substantially same as the thicknessDd of the thin plate sections 12 a and 12 b. With this arrangement, whenan article is mounted to the movable sections 20 a and 20 b, the articlehaving a size matching the distance between the thin plate sections 12 aand 12 b can be mounted in such a manner as to be interposed between themovable sections 20 a and 20 b. In this case, the adhesive region (forexample, the adhesive 38) used for mounting the article corresponds tothe movable sections 20 a and 20 b.

[0099] This structure further has the following advantages. Thepiezo-electric/electrostrictive device 10 can be preferably used invarious sensors, such as ultrasonic sensors, acceleration sensors,angular velocity sensors, impact sensors, mass sensors and the like. Byproperly adjusting the size of the article to be mounted in a spaceextending from the end surfaces 34 a and 34 b to the thin plate sections12 a and 12 b, the sensitivity of the sensor can be easily adjusted.

[0100] Next, the piezo-electric/electrostrictive device 10 according tosecond, third and fourth embodiments where the end surfaces 34 a and 34b are formed, will be described referring to FIG. 4-FIG. 8. However, thepresent invention can be carried out with no problem even if no endsurfaces 34 a and 34 b are formed.

[0101] In the second embodiment, the piezo-electric/electrostrictivedevice 10 a has substantially the same structure as of thepiezo-electric/electrostrictive device 10 described above, as shown inFIG. 4, except that the structures of the recess and the filler aredifferent on the following points.

[0102] The recesses 14 a and 14 b have a step-like structure, and theportion closer to the thin plate section has a larger depth. In thisstructure, the concentrated stress generated at the boundary between thethin plate sections, and the movable sections and the fixing portion,can be dispersed more effectively. The portion of the recess larger inwidth greatly serves to absorb the impact and disperse the concentratedstress efficiently.

[0103] Particularly, the electrode 26 located under the first layer isformed to substantially continue over the side surface of the thin platesections 12 a and 12 b, the movable sections 20 a and 20 b to the fixingsection 14. Then, a part of the electrode 26 is separated at the sidesurface of the fixing portion 14 to form a slit 70. The slit 70 isformed for the following purposes: 1) to prevent the actuator fromdriving at the bottom end portion 72 of thepiezo-electric/electrostrictive elements 18 a and 18 b (i.e., theportion from the bottom end portion of the slit 70 to the bottom end ofthe fixing section 14); 2) to suppress the generation of short circuitat the end of the terminal 28; and 3) to provide an electrode materialunder the piezo-electric/electrostrictive layer 22 at the bottom end ofthe piezo-electric/electrostrictive elements 18 a and 18 b. If it is notpreferable to form the slit 70, the slit 70 is not necessarily formedand may be omitted.

[0104]FIG. 5 shows the shape of the filler filled into the recess. Inthe embodiment shown in FIG. 5(a), the filler fills the recess abouthalfway, and the area near the opening is free from the filler. If therecess has a hollow portion in which no filler is provided is formed atits bottom, the effect of dispersing the stress is not adverselyaffected. In the embodiment shown in FIG. 5(b), the filler is providedin the recess beyond the opening thereof. This arrangement isadvantageous where the filler has weak adhesion, because the filler canbe attached inside the recess in a large area thereby increasing theadhesion of the entire filler. By forming the outer surface of thefiller into R-shape, the filler can be more firmly fixed into therecess, and never peels off at its end portion. FIG. 5(c) shows the casewhere the filler is made of different materials from each other for therespective layers which form the recess together. It is preferable todetermine the combination of the materials to attain the effect ofdispersing the stress by properly selecting the physical properties ofthe materials such as degree of elasticity and porosity, and attachmentto the constituent elements.

[0105] The piezo-electric/electrostrictive device 10 b according to thethird embodiment has a structure in which the recess shown in FIG. 6 isformed into the tapered shape constituted by infinite multiple steps,whereas the device shown in FIG. 4 has the recess formed into the shapeof two steps in its depth direction. The concentrated stress generatedat the boundary between the thin plate sections, and the movablesections and the fixing section can be effectively dispersed. Theportion of the recess being larger in width greatly serves to adsorb animpact, and allows the concentrated stress to disperse efficiently.

[0106]FIG. 7 shows the shape of the filler to be filled in the recess.In the embodiment shown in FIG. 7(a), the filler is filled about halfwayinto the recess, and the area near the opening is free from the filler.If the recess has a hollow portion in which no filler is provided at itsbottom, the effect of dispersing the stress is not adversely affected.Contrarily, in the embodiment shown in FIG. 7(b), the filler is providedin the recess beyond the opening thereof. This arrangement isadvantageous where the filler has weak adhesion, because the filler canbe attached inside the recess in a large area thereby increasing theadhesion of the entire filler. By forming the outer surface of thefiller into R-shape, the filler can be more firmly fixed into therecess, and never peels off at its end portion.

[0107] In the piezo-electric/electrostrictive device 10 c according tothe fourth embodiment, as shown in FIG. 8, the filler having asubstantially uniform thickness is provided in the recess between thethin plate section, and the movable section and the fixing section. Sucha filler is preferably formed at the same time that the thin platesections are integrally formed with the movable section and the fixingsection using ceramics as a material. The preferable material of thefiller is a mixture of ceramics and high-melting point metal orhigh-melting point metal.

[0108] Next, the method for producing thepiezo-electric/electrostrictive device 10 will be described referring toFIGS. 9 to 12.

[0109] The piezo-electric/electrostrictive device 10 includesconstituent elements preferably made of ceramics. Among the constituentelements, the substrate 16 (except for thepiezo-electric/electrostrictive elements 18 a and 18 b), the thin platesections 12 a and 12 b, the fixing section 14, and the movable sections20 a and 20 b are preferably produced by a ceramic green sheetlaminating method. On the other hand, thepiezo-electric/electrostrictive elements 18 a and 18 b, and theterminals 28 and 30 are preferably made by a film formation method suchas that employed for forming thin films and thick films.

[0110] In a ceramic green sheet laminating method capable of integrallyforming the members of the substrate 16 of thepiezo-electric/electrostrictive device 10, there arises almost no changein the state of connections between the members with the elapse of time.Therefore, this method is advantageous to attain high reliability at theconnections between the members and has high rigidity.

[0111] In addition, the production method described below is excellentin productivity and formability. Therefore, thepiezo-electric/electrostrictive device 10 can be produced into apredetermined shape with high reproducibility in a short time.

[0112] Hereinafter, the first method for producing thepiezo-electric/electrostrictive device 10 according to the embodiment ofthe present invention will be described. Herein, definitions are made asfollows. A laminated body obtained by laminating ceramic green sheets ontop of each other is defined as a ceramic green sheet 58 (for example,see FIG. 10). The ceramic green laminated body 58 is sintered andintegrated into a one-piece unit, and the resultant body is defined as aceramic laminated body 60. From the ceramic laminated body 60,unnecessary portions are cut off and removed, and the resultant body,including the movable sections 20 a and 20 b, thin plate sections 12 aand 12 b, and the fixing section 14 as an integrated one-piece unit isdefined as a ceramic substrate 16 (see FIG. 12).

[0113] In this production method, a plurality ofpiezo-electric/electrostrictive devices 10 are arranged on the samesubstrate in its longitudinal and lateral directions. Finally, theceramic laminated bodies 60 are cut off by the unit of chip to obtain aplurality of piezo-electric/electrostrictive devices 10 simultaneouslyin one step. However, in order to simplify the description, theproduction of only one piezo-electric/electrostrictive device 10 isshown.

[0114] First, a binder, a solvent, a dispersant, a plasticizer and thelike are added into a ceramic powder, such as zirconia, and mixed toprepare a slurry. The slurry is subjected to degassing, and after that,formed into a ceramic green sheet by a method such as reverse coating ordoctor blade.

[0115] The ceramic green sheet is processed into various shapes andthicknesses as shown in FIG. 9 by a method such as blanking using a moldand laser processing. As a result, a plurality of ceramic green sheetsfor forming substrates are obtained.

[0116] The details of the prepared ceramics green sheets 50A to 50D, 51Aand 51B, 52A and 52B are as follows. A plurality of (for example, four)ceramic green sheets 50A to 50D are formed with a window section 54 forforming the hole section at least between the thin plate sections 12 aand 12 b. A plurality of (for example, seven) ceramic green sheets 102Ato 102G are formed with a window section 54 for forming the hole sectionbetween the thin plate sections 12 a and 12 b, and a window section 100for forming the movable sections 20 a and 20 b with the end surfaces 34a and 34 b in an opposed relation to each other, and the window sections54 and 100 are joined into one window section. A plurality of (forexample, two) ceramic green sheets 51A and 51B are formed with a windowsection 100 a to be the recesses 14 a and 14 b. A plurality of (forexample, two) ceramic green sheets 52A and 52B to be the thin platesections 12 a and 12 b are formed.

[0117] After that, as shown in FIG. 10, the ceramic green sheets 50A to50D, 5A and 51B, and 102A to 102G are interposed between the ceramicgreen sheets 52A and 52B, and then, these ceramics green sheets 50A to50D, 51A, 51B, 52A and 52B, and 102A to 102G are laminated and crimpedto form a ceramic green laminated body 58. In laminating these greensheets, the ceramic green sheets 102A to 102G are positioned at themiddle positions. Due to the presence of the window sections 100 and 100a, no pressure is applied to some sections of the green sheets in thestep of crimping. In order to prevent sections to which no pressure isapplied in the crimping from being created, it is necessary to alter thesequence of lamination and crimping. Then, the ceramic green laminatedbody 58 is sintered to obtain a ceramic laminated body 60 (see FIG. 11).

[0118] The number of times and the sequence of crimping for laminatingand integrating the green sheets into a one piece unit are notspecifically limited, and may be properly determined so that a ceramicslaminated body in a desired structure can be obtained based on thestructure of the ceramic green laminated body such as, for example, theshape of the window sections 54 and the number of ceramic green sheets.

[0119] It is not necessary that all the window sections 54 have the sameshape each other, and their shapes may be determined in accordance witha desired function. In addition, the number of ceramic green sheets andthe thickness of each green sheet are not specifically limited.

[0120] By crimping the ceramic green sheets through the application ofheat, they can be more firmly laminated. The lamination at theinterfaces between the ceramic green sheets can be enhanced by applyingceramics powder (it is preferable that this ceramics powder has acomposition same or similar to the ceramics used as a material of theceramic green sheets in order to attain high reliability), a pastecontaining a binder as a main component, slurry and the like. When theceramic green sheets 52A and 52B are thin, it is preferable to handlethem using a plastic film, especially a polyethylene terephthalate filmon which a silicone-based releasing agent is applied.

[0121] Next, as shown in FIG. 11, piezo-electric/electrostrictiveelements 18 a and 18 b are formed on both surfaces of the ceramiclaminated body 60, that is, on the surfaces corresponding to thesurfaces on which the ceramic green sheets 52A and 52B are laminated. Asa method for forming the piezo-electric/electrostrictive elements 18 aand 18 b, thick film formation methods such as screen printing, dipping,coating, and electrophoresis, and thin film forming methods such as ionbeam, sputtering, vacuum deposition, ion plating, chemical vapor deposit(CVD), and plating may be employed.

[0122] By employing the film formation method as described above, thepiezo-electric/electrostrictive elements 18 a and 18 b are integrallyformed with the thin plate sections 12 a and 12 b without using anadhesive. As a result, high reliability and high reproducibility areattained, and the piezo-electric/electrostrictive elements 18 a and 18 bcan easily be integrally formed with the thin plate sections 12 a and 12b.

[0123] In this case, it is preferable to employ the thick film formationmethod for forming the piezo-electric/electrostrictive elements 18 a and18 b. The thick film formation method is especially advantageous informing the piezo-electric/electrostrictive layer 22. In this case, agreen sheet can be formed using a paste, slurry, suspension, or emulsioncontaining piezo-electric ceramic particles and powder having an averageparticle diameter of 0.01 to 5 μm, and preferably 0.05 to 3 μm. Bysintering the green sheet, a layer with excellentpiezo-electric/electrostrictive characteristics can be obtained.

[0124] The electrophoresis is advantageous in that it forms a layer withhigh density and high shape precision. Screen printing providessimultaneous film formation and pattern formation, and is thereforeadvantageous in simplifying production.

[0125] The formation of the piezo-electric/electrostrictive elements 18a and 18 b will be specifically described. First, the ceramic greenlaminated body 58 is sintered and integrated at a temperature of 1200 to1600° C. to obtain the ceramic laminated body 60. Next, the firstelectrode 24 of the thin plate sections 12 a and 12 b is printed at apredetermined position on both surfaces of the ceramic laminated body60, and then is sintered. Then, the piezo-electric/electrostrictivelayer 22 is printed and is sintered. After that, the other electrode 26which pairs up with the electrode 24, is printed and sintered. Thesesteps are repeated a predetermined number of times (if thepiezo-electric/electrostrictive elements 18 a and 18 b are constitutedby a multilayered piezo-electric/electrostrictive layer 22), and as aresult, the piezo-electric/electrostrictive elements 18 a and 18 b areformed. After that, terminals 28 and 30 for electrically connecting theelectrodes 24 and 26 to the driving circuit are printed and sintered.

[0126] Alternatively, the first electrodes 24 in the bottom layer areprinted and sintered. Then, the piezo-electric/electrostrictive layer22, and the other electrode 26 which pairs up with the electrode 24 isprinted and sintered. The printing and sintering steps are repeated inthis order in predetermined number of times to obtain thepiezo-electric/electrostrictive elements 18 a and 18 b.

[0127] By selecting the materials of members in such a manner that thesintering temperatures become gradually lower in accordance with theorder of lamination, for example, platinum(Pt) for the electrode 24,lead zirconate titanate (PZT) for the piezo-electric/electrostrictivelayer 22, gold (Au) for the electrode 26, and silver (Ag) for theterminals 28 and 30, the material which has been already sintered is notsintered again at a certain sintering stage. In this manner, troublessuch as peeling and coagulation of the electrode materials and the likecan be avoided.

[0128] It is also possible to sequentially print the members of thepiezo-electric/electrostrictive elements 18 a and 18 b and the terminals28 and 30, and to sinter and integrate them at a time by selectingproper materials. In addition, after forming thepiezo-electric/electrostrictive layer 22, which is the outermost layer,the electrode 26 on the outermost layer can be formed at a lowtemperature.

[0129] The members of the piezo-electric/electrostrictive elements 18 aand 18 b, and the terminals 28 and 30, may be formed by a thin filmformation method such as sputtering and deposition. In this case, heattreatment is not necessarily conducted.

[0130] In the formation of the piezo-electric/electrostrictive elements18 a and 18 b, it is also preferred that thepiezo-electric/electrostrictive elements 18 a and 18 b are formedbeforehand on both surfaces of the ceramic green laminated body 58, thatis, on the surfaces of the ceramic green sheets 52A and 52B, and theceramic green laminated body 58 and the piezo-electric/electrostrictiveelements 18 a and 18 b are simultaneously sintered. As to thesimultaneous sintering, all the films constituting the ceramic greenlaminated body 58 and the piezo-electric/electrostrictive elements 18 aand 18 b may be sintered. It is also possible to simultaneously sinterthe electrodes 24 and the ceramic green laminated body 58, or tosimultaneously sinter all the film constituting the members except forthe electrode 26 and the ceramic green laminated body 58.

[0131] The piezo-electric/electrostrictive elements 18 a and 18 b andthe ceramic green laminate body 58 may be simultaneously sintered by thefollowing steps. First, a precursor of thepiezo-electric/electrostrictive layer 22 is formed by a tape formingmethod using a slurry raw material. The precursor of thepiezo-electric/electrostrictive layer 22 before sintering is laminatedon the surface of the ceramic green laminated body 58 by a method suchas heat deposition, and at the same time, is sintered to simultaneouslyform the movable sections 20 a and 20 b, the thin plate sections 12 aand 12 b, the piezo-electric/electrostrictive layer 22, and the fixingsection 14. In this method, however, it is necessary to form theelectrode 24 on the surface of the ceramic green laminated body 58and/or the piezo-electric/electrostrictive layer 22 beforehand.

[0132] Alternatively, different steps from the above may be employed forsimultaneously sintering the piezo-electric/electrostrictive elements 18a and 18 b and the ceramic green laminate body 58. That is, theelectrodes 24 and 26, and piezo-electric/electrostrictive layer 22,which are constituent elements of the piezo-electric/electrostrictiveelements 18 a and 18 b, are formed on the ceramic green laminated body58 at the positions which are finally the thin plate sections 12 a and12 b, and are sintered simultaneously.

[0133] The temperature employed for sintering the constituent elementsof the piezo-electric/electrostrictive elements 18 a and 18 b isdetermined in accordance with the material of the constituent elements.In general, the temperature is 500 to 1500° C., and as to thepiezo-electric/electrostrictive layer 22, preferably 1000 to 1400° C. Inthis case, in order to control the composition of thepiezo-electric/electrostrictive layer 22, the material thereof ispreferably calcined in the presence of the evaporation source. When thepiezo-electric/electrostrictive layer 22 and the ceramic green laminatedbody 58 are sintered simultaneously, it is necessary to sinter themunder the same conditions. The piezo-electric/electrostrictive elements18 a and 18 b are not necessarily formed on both surfaces of the ceramiclaminated body 60 or the ceramic green laminated body 58, and may beformed only one of the surfaces thereof.

[0134] Next, the ceramic laminated body 60 on which thepiezo-electric/electrostrictive elements 18 a and 18 b are formed is cutalong the cutting lines C1, C2, and C5 to remove the side portions andthe top ends of the ceramic laminated body 60. By cutting the ceramiclaminated body 60, as shown in FIG. 12, thepiezo-electric/electrostrictive device 10 is obtained where the ceramicsubstrate 16 includes the piezo-electric/electrostrictive elements 18 aand 18 b, and movable sections 20 a and 20 b having the end surfaces 34a and 34 b in an opposed relation to each other. The ceramic laminatedbody 60 may be cut along the line C1 and C2 first, and then, along theline C5, or may be cut along the cutting line C5, and then, along thelines C1 and C2. It is also possible that the ceramic laminated body 60may be cut along the cutting lines C1, C2, and C5 simultaneously. Theend surface of the fixing section 14 in an opposed relation to thecutting line C5 may be properly cut when, for example, the entire lengthof the piezo-electric/electrostrictive device is precisely controlled.

[0135] In the production method described above, unnecessary portionsare cut and removed from the ceramic laminated body 60. The obtainedpiezo-electric/electrostrictive device 10 includes thepiezo-electric/electrostrictive elements 18 a and 18 b on the ceramicsubstrate 16, and the movable sections 20 a and 20 b having the endsurfaces 34 a and 34 b. In this method, the production steps can besimplified, and the yield of the piezo-electric/electrostrictive device10 can be increased. It is especially preferable that a plurality ofpiezo-electric/electrostrictive devices 10 are arranged on the samesubstrate in its longitudinal and lateral directions respectively toobtain a plurality of devices in one step.

[0136] The ceramic laminated body may be cut by mechanical processingssuch as dicing and wire saw processing, laser processing with YAG laser,excimer laser, electron beam and the like.

[0137] When the ceramic substrate 16 is cut, the above-describedprocessings are employed in combination. It is preferable, for example,wire saw processing is employed for cutting along the lines C1 and C2(see FIG. 11), and dicing is employed for cutting the fixing sections 14perpendicular to the cutting lines C1 and C2, and the end surface ofmovable sections 20 a and 20 b.

[0138] In the above-described method for producing thepiezo-electric/electrostrictive device 10, thepiezo-electric/electrostrictive elements 18 a and 18 b are formed on thethin plate sections 12 a and 12 b by sintering and integrating them intoa one-piece unit. The thin plate sections 12 a and 12 b, and thepiezo-electric/electrostrictive elements 18 a and 18 b are slightlydisplaced to project toward the hole section 42, and become deformed dueto the shrinkage of the piezo-electric/electrostrictive layer 22, andthe difference in thermal coefficients between the pair of electrodes 24and 26 and the thin plate sections 12 a and 12 b. As a result, internalresidue stress tends to be generated in thepiezo-electric/electrostrictive elements 18 a and 18 b (and especiallypiezo-electric/electrostrictive layer 22) and the thin plate sections 12a and 12 b.

[0139] The internal residue stress is also generated in the thin platesections 12 a and 12 b, and the piezo-electric/electrostrictive layer 22when the piezo-electric/electrostrictive elements 18 a and 18 b areattached to the thin plate sections 12 a and 12 b as separated members,besides in the integration by sintering described above. That is, whenthe adhesive is stabilized or cured, the adhesive shrinks on curing tocause the internal residue stress to generate in the thin plate sections12 a and 12 b, and the piezo-electric/electrostrictive layer 22.Furthermore, if the adhesive requires heat application at the time ofstabilization or curing, larger internal residue stress is generated.

[0140] If the piezo-electric/electrostrictive device 10 is used in thisstate, there are cases where the movable sections 20 a and 20 b do notexhibit a desired amount of displacement even if a specified electricfield is applied to the piezo-electric/electrostrictive layer 22. Thisis because the internal residue stress generated in the thin platesections 12 a and 12 b, and the piezo-electric/electrostrictive layer 22damages the material characteristics of thepiezo-electric/electrostrictive layer 22, and impedes the displacementmovement of the movable sections 20 a and 20 b.

[0141] In order to avoid such trouble, in the production method of thepresent invention, the peripheral portions of the movable sections 20 aand 20 b are cut and removed after the piezo-electric/electrostrictiveelements 18 a and 18 b are formed. As a result of cutting, the endsurfaces 34 a and 34 b in an opposed relation to each other are formedon the movable sections 20 a and 20 b respectively. The end surfaces 34a and 34 b moves in a direction that they get close to each other by theinternal residue stress generated in the thin plate sections 12 a and 12b, and the piezo-electric/electrostrictive layer 22. The width betweenthe end surfaces 34 a and 34 b after they get close to each otherbecomes a second specified width W2 which is shorter than the specifiedwidth W1. More specifically, the second specified width W2 does notextend straightly, but gradually decreases in an upward direction and issmaller at the top ends of the end surfaces 34 a and 34 b than thebottom ends thereof.

[0142] The end surfaces 34 a and 34 b move when the internal residuestress is generated in the thin plate sections 12 a and 12 b, and thepiezo-electric/electrostrictive layer 22 is released. If thepiezo-electric/electrostrictive device 10 is used in the state where theinternal residue stress is released, the movable sections 20 a and 20 bexhibit the displacement movement substantially as designed, and as aresult, the device 10 exhibits excellent characteristics. The sameeffect can be obtained in the case where the end surfaces 34 a and 34 bin an opposed relation to each other are formed in the fixing section 14by cutting a part of the portion to be the fixing section 14. In thiscase, the internal stress generated in the thin plate sections 12 a and12 b, and the piezo-electric/electrostrictive layer 22 is released bythe movement of the end surfaces 34 a and 34 b in an opposed relation toeach other formed in the fixing section 14. The end surfaces 34 a and 34b are not necessarily formed at a middle area of the movable sections 20a and 20 b or the fixing section 14, and the same effect can be obtainedwhen they are formed at positions depart from the middle area.

[0143] In the cutting step shown in FIG. 11, the ceramic laminated bodyafter being cut is preferably heated at 300 to 800° C. for the followingreason. As a result of the cutting process, defects, such as microcracks, tend to be created in the piezo-electric/electrostrictive device10. These defects can be reduced by being heated, and high reliabilitycan be attained. After the heat treatment, the ceramic laminated body issubjected to an aging treatment where it is held at about 80° C. for atleast 10 hours. In the aging treatment, various stresses received in theproduction steps can be further decreased thereby increasing thecharacteristics of the device.

[0144] As described above, according to the present invention, a recessfilled with a filler is present between at least the thin plate sectionand movable section, or between the thin plate section and the fixingsection. With this arrangement, even if the thin plate sections createlarge displacement by receiving a large impact from the outside, andstress is generated at a boundary between the thin plate section and themovable section or between the thin plate section and the fixingsection, the stress is dispersed into the filler provided in the recess.In this manner, there is no damage which has conventionally resultedfrom the concentration of stress, and there is only a small influence tothe basic properties of the piezo-electric/electrostrictive device. As aresult, the impact resistance of the thin plate sections is enhanced.

We claim:
 1. A method for producing a piezo-electric/electrostrictivedevice comprising a pair of thin plate sections in an opposed relationto each other, a fixing section for supporting the thin plate sections,the pair of thin plate sections having a movable section at a top endthereof, and at least one of the pair of thin plate sections having oneor more piezo-electric/electrostrictive elements, including the stepsof: forming and preparing a first ceramic green sheet to be the thinplate section, a second ceramic green sheet having a first windowsection, and a third ceramic green sheet having a window section smallerthan the first window section; and interposing at least the secondceramic green sheet between the first and third ceramic green sheets toprepare a laminated body of a plurality of ceramic green sheets.
 2. Amethod for producing a piezo-electric/electrostrictive device comprisinga pair of thin plate sections in an opposed relation to each other, afixing section for supporting the thin plate sections, the pair of thinplate sections having a movable section at a top end thereof, and atleast one of the pair of thin plate sections having one or morepiezo-electric/electrostrictive elements, including the steps of:forming and preparing a first ceramic green sheet to be the thin platesection, and a second ceramic green sheet having a window section; andinterposing a sheet containing a high-melting point metal between thefirst ceramic green sheet and the second ceramic green sheet.
 3. Apiezo-electric/electrostrictive device according to claim 2, wherein thesheet containing the high-melting point metal is formed by a printforming.